Shenzhen Hefengxin Technology Co., Ltd.

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DXT5401-13 Bipolar Junction Transistor 1W 150V Small Robust Design

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DXT5401-13 Bipolar Junction Transistor 1W 150V Small Robust Design

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Brand Name :Diodes Incorporated
Model Number :DXT5401-13
Place of Origin :United States
MOQ :1
Price :USD 0.01-20/piece
Payment Terms :T/T
Delivery Time :5-8 work days
Packaging Details :SMD/SMT
Product type :Bipolar transistor-bipolar junction transistor (BJT)
encapsulation :Reel,Cut Tape,MouseReel
Installation style :SMD/SMT
package/box :SOT-89-3
series :DXT5401
unit weight :52 mg
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Manufacturer: Diodes Incorporated
Product category: bipolar transistor-bipolar junction transistor (BJT)
Technology: si
Installation style: SMD/SMT
Package/box: SOT-89-3
Transistor polarity: PNP
Configuration: Single
Maximum DC collector current: 600 mA
Maximum collector-emitter voltage VCEO: 150 V.
Collector-base voltage vcbo: 160 v.
Emitter-base voltage VEBO: 5 V
Collector-emitter saturation voltage: 500 mV
Pd- power dissipation: 1 W
Gain bandwidth product ft: 300mhz
Minimum operating temperature:-55 C.
Maximum operating temperature:+150 C.
Series: DXT5401
Package: Reel
Package: cuttape
Encapsulation: MouseReel
Trademark: Diodes Incorporated
Dc collector/basegain hfemin: 50 at-50 ma,-5 v.
Height: 1.6 mm
Length: 4.6 mm
Product type: BJTs-Bipolar Transistors
Subcategory: Transistors
Width: 2.6 mm
Unit weight: 52 mg

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