Shenzhen Hefengxin Technology Co., Ltd.
Shenzhen Hefengxin Technology Co., Ltd.
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Manufacturer: Diodes Incorporated
Product category: bipolar transistor-bipolar junction transistor (BJT)
Technology: si
Installation style: SMD/SMT
Package/box: SOT-363-6
Transistor polarity: NPN
Configuration: Dual
Maximum DC collector current: 600 mA
Maximum collector-emitter voltage VCEO: 40 V.
Collector-base voltage VCBO: 75 V
Emitter-base voltage VEBO: 6 V
Collector-emitter saturation voltage: 1 V
Pd- power dissipation: 200mw
Gain bandwidth product ft: 300mhz
Minimum operating temperature:-55 C.
Maximum operating temperature:+150 C.
Series: MMDT22
Package: Reel
Package: cuttape
Encapsulation: MouseReel
Trademark: Diodes Incorporated
Collector continuous current: 600 mA
Maximum DC current gain hFE: 300
Height: 1 mm
Length: 2.2 mm
Product type: BJTs-Bipolar Transistors
Subcategory: Transistors
Width: 1.35 mm
Unit weight: 6 mg